Hypertec HYMAP30512 (Legacy) memory module 0.5 GB 1 x 0.25 GB SDR SDRAM

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Description

Hypertec HYMAP30512 (Legacy) memory module 0.5 GB 1 x 0.25 GB SDR SDRAMA Hypertec Legacy Memory Module is a module that uses no current DRAM technology and is no longer in mainstream production by OEMS and or third party suppliers. Hypertec are committed to providing a full memory upgrade landscape as part of our core product offering and as such, there may be occasions where we need to utilise professionally repurposed components. Any repurposed components are removed within a full ESD environment and then used to

Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Memory form factor 204-pin SO-DIMM ECC No Memory clock speed 1333 MHz Internal memory type DDR3

35 V Memory channels Single-channel ECC Yes Memory clock speed 1333 MHz Internal memory type DDR3L Features Product colour Blue Internal memory 8 GB Component for PC/server Memory form factor 240-pin DIMM CAS latency 9 Memory voltage 1

VPC-F12GFX/B

2 V Memory ranking 2 ECC Yes Memory clock speed 2666 MHz Internal memory type DDR4 Features Buffered memory type Registered (buffered) Backlight No Memory layout (modules x size) 1 x 16 GB Internal memory 16 GB Component for Server Memory form factor 288-pin DIMM CAS latency 19 Memory voltage 1

5 V Internal memory type DDR3 Operational conditions Operating temperature (T-T) 0 - 85 °C Storage temperature (T-T) -55 - 100 °C Technical details Compliance certificates RoHS

A Fujitsu equivalent 8 GB Unbuffered Non-ECC DDR3 SDRAM - SO-DIMM 204-pin 1600 MHz ( PC3-12800 ) from Hypertec

2 V Memory ranking 1 ECC Yes Memory clock speed 2133 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Backlight No Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Component for Workstation Memory form factor 288-pin DIMM CAS latency 15 Memory voltage 1

Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 4 x 4 GB Internal memory 16 GB Memory form factor 240-pin DIMM ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 4 x 4 GB Internal memory 16 GB Memory form factor 240-pin DIMM ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3

Memory Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 204-pin SO-DIMM Memory ranking 2 ECC No Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 204-pin SO-DIMM Memory ranking 2 ECC No Memory clock speed 1333 MHz Internal memory type DDR3

The new TSV 3DS stack technology enables higher density DRAM stack packages with higher operational frequency and reduced power consumption

Memory Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 204-pin SO-DIMM CAS latency 10 ECC No Memory clock speed 1600 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Internal memory 4 GB Memory form factor 204-pin SO-DIMM CAS latency 10 ECC No Memory clock speed 1600 MHz Internal memory type DDR3

and memory-intensive applications

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